Part Number | FDB12N50TM |
---|---|
Manufacturer | AMI Semiconductor / ON Semiconductor |
Description | MOSFET N-CH 500V 11.5A D2PAK |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Quantity Available | In Stock |
Datasheets | FDB12N50TM.pdf |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | D²PAK |
Series | UniFET™ |
Rds On (Max) @ Id, Vgs | 650 mOhm @ 6A, 10V |
Power Dissipation (Max) | 165W (Tc) |
Packaging | Contact Email:sales@antdic.com |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Other Names | FDB12N50TMCT |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 9 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 1315pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 500V |
Detailed Description | N-Channel 500V 11.5A (Tc) 165W (Tc) Surface Mount D²PAK |
Current - Continuous Drain (Id) @ 25°C | 11.5A (Tc) |