Part Number | NSBA114EDXV6T1G |
---|---|
Manufacturer | AMI Semiconductor / ON Semiconductor |
Description | TRANS 2PNP PREBIAS 0.5W SOT563 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Quantity Available | In Stock |
Datasheets | NSBA114EDXV6T1G.pdf |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Supplier Device Package | SOT-563 |
Series | - |
Resistor - Emitter Base (R2) | 10 kOhms |
Resistor - Base (R1) | 10 kOhms |
Power - Max | Contact Email:sales@antdic.com |
Packaging | Tape & Reel (TR) |
Package / Case | SOT-563, SOT-666 |
Other Names | NSBA114EDXV6T1G-ND NSBA114EDXV6T1GOSTR |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 2 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Frequency - Transition | - |
Detailed Description | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563 |
DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
Current - Collector Cutoff (Max) | 500nA |
Current - Collector (Ic) (Max) | 100mA |
Base Part Number | NSBA1* |