Part Number | AOI4S60 |
---|---|
Manufacturer | Alpha and Omega Semiconductor, Inc. |
Description | MOSFET N-CH 600V 4A TO251A |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Quantity Available | In Stock |
Datasheets | AOI4S60(1).pdfAOI4S60(2).pdf |
Vgs(th) (Max) @ Id | 4.1V @ 250µA |
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-251A |
Series | aMOS™ |
Rds On (Max) @ Id, Vgs | 900 mOhm @ 2A, 10V |
Power Dissipation (Max) | 56.8W (Tc) |
Packaging | Contact Email:sales@antdic.com |
Package / Case | TO-251-3 Stub Leads, IPak |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 263pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs | 6nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 600V |
Detailed Description | N-Channel 600V 4A (Tc) 56.8W (Tc) Through Hole TO-251A |
Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |