Part Number | EMH9T2R |
---|---|
Manufacturer | LAPIS Semiconductor |
Description | TRANS 2NPN PREBIAS 0.15W EMT6 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Quantity Available | In Stock |
Datasheets | EMH9T2R(1).pdfEMH9T2R(2).pdf |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Supplier Device Package | EMT6 |
Series | - |
Resistor - Emitter Base (R2) | 47 kOhms |
Resistor - Base (R1) | 10 kOhms |
Power - Max | Contact Email:sales@antdic.com |
Packaging | Cut Tape (CT) |
Package / Case | SOT-563, SOT-666 |
Other Names | EMH9T2RCT |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Manufacturer Standard Lead Time | 10 Weeks |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Frequency - Transition | 250MHz |
Detailed Description | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6 |
DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
Current - Collector Cutoff (Max) | 500nA |
Current - Collector (Ic) (Max) | 100mA |
Base Part Number | *MH9 |