Part Number | SI4866BDY-T1-GE3 |
---|---|
Manufacturer | Vishay Precision Group |
Description | MOSFET N-CH 12V 21.5A 8-SOIC |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Quantity Available | In Stock |
Datasheets | SI4866BDY-T1-GE3.pdf |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Vgs (Max) | ±8V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | 8-SO |
Series | TrenchFET® |
Rds On (Max) @ Id, Vgs | 5.3 mOhm @ 12A, 4.5V |
Power Dissipation (Max) | 2.5W (Ta), 4.45W (Tc) |
Packaging | Contact Email:sales@antdic.com |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Other Names | SI4866BDY-T1-GE3CT |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 5020pF @ 6V |
Gate Charge (Qg) (Max) @ Vgs | 80nC @ 4.5V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Drain to Source Voltage (Vdss) | 12V |
Detailed Description | N-Channel 12V 21.5A (Tc) 2.5W (Ta), 4.45W (Tc) Surface Mount 8-SO |
Current - Continuous Drain (Id) @ 25°C | 21.5A (Tc) |