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SI4866BDY-T1-GE3

Part Number: SI4866BDY-T1-GE3
Manufacturer: Vishay Precision Group
Description: MOSFET N-CH 12V 21.5A 8-SOIC
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Datasheets: SI4866BDY-T1-GE3.pdf
Quantity: 40151 pcs

Reference Price(In US Dollars)

  • 1 pcs$1.49
  • 10 pcs$1.42
  • 100 pcs$1.34
  • 500 pcs$1.27
  • 1000 pcs$1.19
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Part Number SI4866BDY-T1-GE3
Manufacturer Vishay Precision Group
Description MOSFET N-CH 12V 21.5A 8-SOIC
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Quantity Available In Stock
Datasheets SI4866BDY-T1-GE3.pdf
Vgs(th) (Max) @ Id 1V @ 250µA
Vgs (Max) ±8V
Technology MOSFET (Metal Oxide)
Supplier Device Package 8-SO
Series TrenchFET®
Rds On (Max) @ Id, Vgs 5.3 mOhm @ 12A, 4.5V
Power Dissipation (Max) 2.5W (Ta), 4.45W (Tc)
Packaging Contact Email:sales@antdic.com
Package / Case 8-SOIC (0.154", 3.90mm Width)
Other Names SI4866BDY-T1-GE3CT
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 5020pF @ 6V
Gate Charge (Qg) (Max) @ Vgs 80nC @ 4.5V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Drain to Source Voltage (Vdss) 12V
Detailed Description N-Channel 12V 21.5A (Tc) 2.5W (Ta), 4.45W (Tc) Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25°C 21.5A (Tc)