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Electro-Films (EFI) / VishaySI5513DC-T1-E3 Image Images are for reference only.
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SI5513DC-T1-E3

Part Number: SI5513DC-T1-E3
Manufacturer: Vishay Precision Group
Description: MOSFET N/P-CH 20V 3.1A 1206-8
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Datasheets: SI5513DC-T1-E3.pdf
Quantity: 39212 pcs

Reference Price(In US Dollars)

  • 1 pcs$10.00
  • 10 pcs$9.50
  • 100 pcs$9.00
  • 500 pcs$8.50
  • 1000 pcs$8.00
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Part Number SI5513DC-T1-E3
Manufacturer Vishay Precision Group
Description MOSFET N/P-CH 20V 3.1A 1206-8
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Quantity Available In Stock
Datasheets SI5513DC-T1-E3.pdf
Vgs(th) (Max) @ Id 1.5V @ 250µA
Supplier Device Package 1206-8 ChipFET™
Series TrenchFET®
Rds On (Max) @ Id, Vgs 75 mOhm @ 3.1A, 4.5V
Power - Max 1.1W
Packaging Cut Tape (CT)
Package / Case 8-SMD, Flat Lead
Other Names Contact Email:sales@antdic.com
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds -
Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Detailed Description Mosfet Array N and P-Channel 20V 3.1A, 2.1A 1.1W Surface Mount 1206-8 ChipFET™
Current - Continuous Drain (Id) @ 25°C 3.1A, 2.1A
Base Part Number SI5513